Field Effect Transistor Tranzistors MOS-N-Ch 600V 20A 208W 0.19R TO220 7798751 6,20 € Pievienot grozam
Field Effect Transistor Tranzistors MOS-N-Ch 100V 41A 230W 0.055R(25A) 5397047 3,22 € Pievienot grozam
Field Effect Transistor Tranzistors IRF7319PBF MOS-NP-Ch 30V 6.5/4.9A 2.0W SO8 INTERNATIONAL RECTIFIER SK32628 1,29 € Pievienot grozam
Field Effect Transistor Tranzistors MOS-N-Ch 600V 7.2A 125W 1.2om(3.6A) STMICROELECTRONICS 5874736 2,81 € Pievienot grozam
Nav noliktavā Field Effect Transistor Tranzistors P2804BDG MOS-N-Ch 40V 10A 32W TO-252 2420179 3,47 € Tranzistors P2804BDG MOS-N-Ch 40V 10A 32W TO-252 SPECIFIKĀCIJA: Korpuss: TO-252 Ražotājs: NIKO-SEM Polaritāte: n-channel Pieslēgums: SMD ROHS: Jā Max. spriegums: 40V Jauda: 32W Max. strāva: 10A Max. temperatūra: 150°C Skatīt
Field Effect Transistor Tranzistors MOS-N-Ch 100V 28A 150W 0.077R TO220 459594 2,64 € Housing Type: TO-220AB, Manufacturer: VISHAY ehemals International Rectifier, Polarity : n-channel, Connection type: Push-through installation, ROHS: Yes, Max. Working Voltage: 100V, Capacity: 100W, Max. Amperage: 28A, Max. Temperature: 175°C Pievienot grozam
Field Effect Transistor Tranzistors MOS-N-Ch 200V 18A 125W 0.18R TO220 383263 2,56 € Pievienot grozam